dmn 62d0lf d document number: ds 36359 rev. 3 - 3 1 of 6 www.diodes.com september 2017 ? diodes incorporated dmn 62d0l f d new product n - channel enhancement mode mosfet product summary b v dss r ds(on) m ax i d t a = + 25c 6 0v 2 ? @ v gs = 4 v 310 ma 2.5 ? @ v gs = 2 .5v 295 m a description this new generation mosfet has been designed to minimize the on - state resistance (r d s( on ) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. applications ? ? ? ? features and benefits ? ? ? ? ? esd protected ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony fr ee. green device (note 3 ) ? qualified to aec - q101 standards for high reliability mechanical data ? ? ? ? ? ? ordering information (note 4) part number compliance case packaging dmn 62d0lfd - 7 standard x1 - dfn1 212 - 3 3 , 000/tape & reel dmn 62d0lfd - 13 standard x1 - dfn1212 - 3 10, 000/tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more informat ion about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging det ails, go to our website at https://www.diodes.com/design/support/packaging/diodes - packaging/ . marking information date code key year 2007 2008 2009 2010 2011 2012 201 3 201 4 201 5 201 6 201 7 code u v w x y z a b c d e month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d top view bottom view equivalent circuit esd protected k 63 = product type marking code ym = date code marking y = year (ex: e = 201 7 ) m = m onth (ex: 9 = september) g pin k6 3 ym pin - out top view d s g not recommended for new design use dmn62d1lfd source body diode gate protection diode gate drain e4
dmn 62d0lf d document number: ds 36359 rev. 3 - 3 2 of 6 www.diodes.com september 2017 ? diodes incorporated dmn 62d0l f d new product maximum ratin gs (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit drain - source voltage v dss 6 0 v gate - source voltage v gss 2 0 v continuous drain current (note 5 ) v gs = 4.0v t a = + 25c t a = + 70 c i d 310 260 m a pulsed drain cu rrent (note 6 ) ( 10 s p ulse , d uty c ycle = 1% ) i dm 1.0 a thermal characteristics characteristic symbol max unit power dissipation (note 5 ) p d 0. 48 w thermal resistance, junction to ambient @t a = + 25c (note 5 ) r ja 265 c/w operating and storage temperature range t j , t stg - 55 to +150 c electrical c haracteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7 ) drain - source breakdown voltage bv dss 6 0 v v gs = 0v, i d = 250a zero gate voltage drain current t j = + 25c i dss 1.0 a v ds = 6 0 v, v gs = 0v gate - source leakage i gss 1 00 n a v gs = 5 v, v ds = 0v 500 na v gs = 10v, v ds = 0v 2.0 a v gs = 15v, v ds = 0v on characteristics (note 7 ) gate threshold voltage v gs (th) 0. 6 1. 0 v v ds = v gs , i d = 250 a static drain - source on - resistance r ds(on) 1.3 2 v gs = 4 v, i d = 1 00m a 1. 4 2.5 v gs = 2 .5 v, i d = 50m a 1. 8 3 v gs = 1.8 v, i d = 50m a 2. 4 v gs = 1 .5 v, i d = 10m a forward transfer admittance |y fs | 1.8 s v ds = 10 v, i d = 200m a diode forward voltage v sd 0. 8 1. 3 v v gs = 0v, i s = 1 15m a dynamic characteristics (note 8 ) input capacitance c iss 31 pf v ds = 2 5 v, v gs = 0v , f = 1.0mhz out put capacitance c oss 4.3 reverse transfer capacitance c rss 3.0 gate resistance r g 99 v ds = 0 v, v gs = 0v , f = 1mhz total gate charge q g 0.5 nc v gs = 4.5 v, v ds = 10 v, i d = 250m a gate - source charge q gs 0.09 gate - drain charge q gd 0.07 turn - on delay time t d( on ) 2.6 ns v gs = 10 v, v ds = 30 v, r l = 150 , r g = 25 , i d = 20 0ma turn - on rise time t r 2.1 ns turn - off delay time t d( off ) 18 ns turn - off fall time t f 8.7 ns notes: 5 . device mounted on fr - 4 pcb with minimum recommended pad layout, single sided . 6 . repetitive rating, pulse width limited by junctio n temperature. 7 . short duration pulse test used to minimize self - heating effect. 8 . guaranteed by design. not subject to production testing. not recommended for new design use dmn62d1lfd
dmn 62d0lf d document number: ds 36359 rev. 3 - 3 3 of 6 www.diodes.com september 2017 ? diodes incorporated dmn 62d0l f d new product v , gate - source voltage (v) gs figure 2 typical transfer characteristics i , d r a i n c u r r e n t ( a ) d 0.1 0.2 0.3 0.4 0.5 1.5 2.0 2.5 0 0.5 1.0 0 v = 5.0v ds t = 150c a t = 125c a t = 85c a t = 25c a t = - 55c a i d , drain current (a) 3.0 i , drain current (a) d fig ure 4 typical on - resistance vs. drain current and temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? t = - 55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs r ds(on) , drain - source on - resistance ( ? not recommended for new design use dmn6 2d1lfd 0 0.5 1.0 1.5 2.0 2.5 3.0 v , drain-source voltage (v) figure 1 typical output characteristics ds i , d r a i n c u r r e n t ( a ) d 0.0 0.1 0.2 0.3 0.4 0.5 v = 1.2v gs v = 1.5v gs v = 2.0v gs v = 2.5v gs v = 3.5v gs v = 4.0v gs v = 4.5v gs v = 10v gs v = 3.0v gs i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 0 0.1 0.2 0.3 0.4 0.5 v = 2.5v gs v = 4.5v gs v = 10v gs -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) figure 5 on-resistance variation with temperature j ? r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) 2.4 2.0 1.6 1.2 0.8 0.4 v = .5v i = 100ma gs d 2 v = v i = 200ma gs d 4 0 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) figure 6 on-resistance variation with temperature j ? r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v = .5v i = 100ma gs d 2 v = v i = 200ma gs d 4 0.5 1.0 1.5 2.0 2.5 3.0
dmn 62d0lf d document number: ds 36359 rev. 3 - 3 4 of 6 www.diodes.com september 2017 ? diodes incorporated dmn 62d0l f d new product - 50 - 25 0 25 50 75 100 125 150 t , junction temperature (c) figure 7 gate threshold variation vs. junction temper ature j ? g s ( t h ) i = 1ma d i = 250a d 1.0 1.2 v gs(th) , gate threshold voltage (v) v , source - drain voltage (v) sd fi gure 8 diode forward voltage vs. current i , s o u r c e c u r r e n t ( a ) s 0 0.1 0.2 0.3 0.4 0.5 0 0.3 0.6 0.9 1.2 1.5 t = 25c a i s , source current (a) not recommended for new design use dmn62d1lfd v gs , gate - source voltage (v) c , j u n c t i o n c a p a c i t a n c e ( p f ) t c iss f = 1mhz c oss c rss 100 0 10 20 30 40 v , drain-source voltage (v) ds figure 9 typical junction capacitance 10 1 q (nc) g , total gate charge figure 10 gate charge 0 2 4 6 8 10 v g a t e t h r e s h o l d v o l t a g e ( v ) g s 0 0.2 0.4 0.6 0.8 1.0 1.2 v = 10v i = a ds d 250m 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, pulse duration time (sec) figure 11 transient thermal resistance 0.001 0.01 0.1 1 r(t), transient thermal resistance d = 0.5 d = 0.7 d = 0.9 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse r (t) = r(t) * r r = 256c/w duty cycle, d = t1/ t2 ?? ? ja ja ja 0.000001
dmn 62d0lf d document number: ds 36359 rev. 3 - 3 5 of 6 www.diodes.com september 2017 ? diodes incorporated dmn 62d0l f d new product package outline dimensions please see http://www.diodes.com/package - outlines.html for the latest version. x1 - dfn1212 - 3 x1 - dfn1212 - 3 dim min max typ a 0.47 0.53 0.50 a1 0 0.05 0.02 a3 - - 0.13 b 0.27 0.37 0.32 b1 0.17 0.27 0.22 d 1.15 1.25 1.20 e 1.15 1.25 1.20 e - - 0.80 l 0.25 0.35 0.30 all dimensions in mm suggested pad layou t please see http://www.diodes.com/package - outlines.html for the latest version. x1 - dfn1212 - 3 dimensions value (in mm) c 0.80 x 0.42 x1 0.32 y 0.50 y1 0.50 y2 1.50 not recommended for new design use dmn62d1lfd d e e l(3x) a a3 seating plane a1 b b1(2x) y2 x x1 (2x) y y1 (2x) c
dmn 62d0lf d document number: ds 36359 rev. 3 - 3 6 of 6 www.diodes.com september 2017 ? diodes incorporated dmn 62d0l f d new product important notice diodes incorporated makes no warranty of any kind, express or impli ed, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability a rising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rig hts, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability what soever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its rep resentatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be cove red by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be trans lated into mul tiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical co mponents in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into th e body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary exp ertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be pr ovided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 2017 , diodes incorporated www.diodes.com not recommended for new design use dmn62d1lfd
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